Takashi Nakamura, Eishi Yahagi, Hideaki Kameyama, "Terrestrial Neutron-Induced Soft Errors in Advanced Memory Devices"
2008 | ISBN: 9812778810 | 368 pages | PDF | 14 MB
Terrestrial neutron-induced soft errors in semiconductor memory devices are currently a major concern in reliability issues. Understanding the mechanism and quantifying soft-error rates are primarily crucial for the design and quality assurance of semiconductor memory devices.
You must register before you can view this text.
No comments:
Post a Comment